A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics

2023/11/01 by Matthew A. Mircovich, Mircovich, Matthew A., John Kouvetakis +3
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photonic and Optical Devices #Semiconductor materials and interfaces #Thin-Film Transistor Technologies

paper · pdf · doi:10.48550/arxiv.2311.00198

openalex publication_date 2023/11/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A practical quantitative model is presented to account for the I-V characteristics of pin diodes based on epitaxial Ge-like materials. The model can be used to quantify how the different material properties and recombination mechanisms affect the diode performance. The importance of dislocations, non-passivated defects, and residual intrinsic layer doping in determining the qualitative shape of the I-V curves is discussed in detail. Examples are shown covering literature diodes as well as diodes fabricated with the purpose of validating the theoretical effort.

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