2023/04/17 by Clemens Todt, Todt, Clemens, Sjoerd Telkamp +23 · 2 citations
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Particle accelerators and beam dynamics #Physics of Superconductivity and Magnetism #Superconducting Materials and Applications
paper · pdf · doi:10.48550/arxiv.2304.08339
openalex publication_date 2023/04/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present Nb thin films deposited in-situ on GaAs by combining molecular beam epitaxy and magnetron sputtering within an ultra-high vacuum cluster. Nb films deposited at varying power, and a reference film from a commercial system, are compared. The results show clear variation between the in-situ and ex-situ deposition which we relate to differences in magnetron sputtering conditions and chamber geometry. The Nb films have critical temperatures of around 9 \textrmK. and critical perpendicular magnetic fields of up to Bc2 = 1.4 \textrmT at 4.2 \textrmK. From STEM images of the GaAs-Nb interface we find the formation of an amorphous interlayer between the GaAs and the Nb for both the ex-situ and in-situ deposited material.