2023/03/06 by Rakesh Prasad, Koushik Ghosh, Prasad, Rakesh K. +7 · 1 citation
Engineering · Materials Science · #2D Materials and Applications #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Nanowire Synthesis and Applications #Photonic and Optical Devices
paper · pdf · doi:10.48550/arxiv.2303.15289
openalex publication_date 2023/03/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Future generation technologies demand high efficiency photodetectors to enable sensing and switching devices for ultrafast communication and machine vision. This require direct-band gap materials with high photosensitivity, high detectivity and high quantum efficiency. Monolayered two- Dimensional (2D)-Semiconductors based photodetectors are the most promising materials for such applications, although experimental realization has been limited due to unavailability of high quality sample. In the current manuscript, we report about WS2 based photodetector having sensitivity of 290 AW-1 upon 405 nm excitation and incident power density as low as 0.06 mW/cm2. The fabricated device shows detectivity of 52*1014 with external quantum efficiency of 89*103%. The observed superior photo-response parameters of CVD grown WS2 based photodetector as compared to Si-detectors establishes it capability to replace the Si-photodetectors with monolayered ultrathin device having superior performance parameters.