Controlling friction in a manganite surface by resistive switching

2016/11/08 by Hendrik Schmidt, Schmidt, Hendrik, Jon‐Olaf Krisponeit +7 · 1 citation
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Shape Memory Alloy Transformations #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1611.02684

13 pages, 5 figures

arxiv created 2016/11/08 · openalex publication_date 2016/11/08 · arxiv updated 2016/11/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report a significant change in friction of a \rm La_0.55Ca_0.45MnO₃ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While friction is high in the insulating state, it clearly changes to lower values if the probed local region is switched to the conducting state via nanoscale resistance switching. Thus we demonstrate active control of friction without having to change the temperature or pressure. Upon switching back to an insulating state the friction increases again. The results are discussed in the framework of electronic friction effects and electrostatic interactions.

Cited by

• Switching friction at a manganite surface using electric fields

Related

• Switching friction at a manganite surface using electric fields
• Nanoscale friction of manganite superlattice films controlled by layer thickness and fluorine content
• Nanoscale friction controlled by top layer thickness in [LaMnO₃]_m/[SrMnO₃]_n superlattices
• Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM
• Detecting percolative metal-insulator transition in manganites by resistive relaxation