2007/07/19 by Yu. G. Semenov, K. W. Kim, Semenov, Y. G. +3
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.0707.2966
openalex publication_date 2007/07/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the graphene channel. Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV. It was shown that the device stability to the thermal dispersion can provide the armchair nanoribbons of specific width that keeps the Dirac point in electron dispersion law.