Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure

2018/01/23 by V. Ya. Aleshkin, А. А. Дубинов, Aleshkin, V. Ya. +13
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices

paper · pdf · doi:10.48550/arxiv.1801.07396

openalex publication_date 2018/01/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A₃B₅ heterostructures.

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