The effect of strain on the thawing of the hidden state and other transitions in 1T-TaS2

2014/06/05 by Svetin, Damjan, Vaskivskyi, Igor, Sutar, Petra +3
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el)

paper · doi:10.48550/arxiv.1406.1427

Abstract

We investigate the effect of 2-dimensional (in-plane) strain on the critical transition temperature TH from the photoexcited hidden state in 1T-TaS₂ thin films on different substrates. We also measure the effect of in-plane strain on the transition temperature T_c2 between the nearly commensurate charge-density wave state and the commensurate state near 200 K. In each case, the strain is caused by the differential contraction of the sample and the substrate, and ranges from 0.5 % compressive strain (CaF₂) to 2 % tensile strain (sapphire). Strain appears to have an opposite effect on the H state and the NC-C state transitions. TH shows a large and negative strain coefficient of dT_H/de = - 8900+/-500 K, while T_c2 is not strongly affected by tensile strain and shows a positive coefficient for compressive strain, which is opposite to the effect observed for hydrostatic pressure.

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