2019/10/21 by Tuan T. Tran, Tran, Tuan Thien, Lukas Jablonka +7
Engineering · Physics and Astronomy · #Advanced Materials Characterization Techniques #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1910.09393
openalex publication_date 2019/10/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We demonstrate a novel approach for non-destructive in-situ characterization\nof phase transitions of ultrathin nickel silicide films using 3D medium-energy\nion scattering. The technique provides simultaneously composition and\nreal-space crystallography of silicide films during the annealing process using\na single sample. We show, for 10 nm Ni films on Si, that their composition\nfollows the normal transition sequence, such as Ni-Ni2Si-NiSi. For samples with\ninitial Ni thickness of 3 nm, depth-resolved crystallography using a\nposition-sensitive detector, shows that the Ni film transform from an\nas-deposited disordered layer to epitaxial silicide layers at a relatively low\ntemperature of ~290 \degC.\n