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Transport in T-shaped ballistic junction

2011/12/29 by M. Bek, Bek, M., Bogdan R. Bułka +4
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1112.6264

11 pages, 14 figures

arxiv created 2011/12/29 · openalex publication_date 2011/12/29 · arxiv updated 2011/12/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We present studies of ballistic transport in three terminal T-shaped junction in a linear and non-linear regime. The floating electrode acts as a scatterer and modifies the conductance in a direct channel (between source and drain electrode). In the low voltage limit, the conductance shows the Wigner threshold effect and the bend resistance. A specific shape of the Wigner singularities can be changed by applied voltage to the floating electrode as well as by a shift of the Fermi level. The system also exhibits filtering properties with current distribution between different modes propagating in the junction. Back action of current flowing in the direct channel on changes of the voltage in the floating electrode is considered in the non-linear regime.

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