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I-V characteristics of in-plane and out-of-plane strained edge-hydrogenated armchair graphene nanoribbons

2015/06/18 by Santiago J. Cartamil-Bueno, Cartamil-Bueno, Santiago J., S. Rodrı́guez +2
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Molecular Junctions and Nanostructures #Nanowire Synthesis and Applications #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1506.05601

22 pages, 7 figures

arxiv created 2015/06/18 · arxiv updated 2015/06/19

Abstract

The effects of tensile strain on the current-voltage (I-V) characteristics of hydrogenated-edge armchair graphene nanoribbons (HAGNRs) are investigated by using DFT theory. The strain is introduced in two different ways related to the two types of systems studied in this work: in-plane strained systems (A), and out-of-plane strained systems due to bending (B). These two kinds of strain lead to make a distinction among three cases: in-plane strained systems with strained electrodes (A1) and with unstrained electrodes (A2), and out-of-plane homogeneously strained systems with unstrained, fixed electrodes (B). The systematic simulations to calculate the electronic transmission between two electrodes were focused on systems of 8 and 11 dimers in width. The results show that the differences between cases A2 and B are negligible, even though the strain mechanisms are different: in the plane case, the strain is uniaxial along its length, while in the bent case the strain is caused by the arc deformation. Based on the study, a new type of NEMS-solid state switching device is proposed.

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