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X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray\n Astronomical SOI Pixel Sensor, XRPIX

2016/04/01 by Makoto Itou, Takeshi Go Tsuru, Itou, Makoto +25
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Astrophysical Phenomena and Observations #CCD and CMOS Imaging Sensors #FOS: Physical sciences #Instrumentation and Methods for Astrophysics (astro-ph.IM) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies

paper · pdf · doi:10.48550/arxiv.1604.00170

openalex publication_date 2016/04/01 · openalex created_date 2022/08/29 · openalex updated_date 2026/07/28

Abstract

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future\nX-ray astronomy satellites that enable us to observe in the wide energy band of\n0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8\n\μm in the front side of the sensor, it is impossible to detect low energy\nX-rays with a front-illuminated type. So, we have been developing\nback-illuminated type of XRPIX with a less 1 \μm dead layer in the\nback-side, which enables the sensitivity to reach 0.5 keV. We produced two\ntypes of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza\nprocess" which LBNL developed and the other is processed in the ion\nimplantation and laser annealing. We irradiated both of the BI-XRPIXs with soft\nX-ray and investigate soft X-ray performance of them. We report results from\nsoft X-ray evaluation test of the device.\n

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