2020/08/22 by Aniello Pelella, Pelella, Aniello, Alessandro Grillo +15
Engineering · Materials Science · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Nanowire Synthesis and Applications
paper · doi:10.48550/arxiv.2008.09910
openalex publication_date 2020/08/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS2 nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.