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Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron\n Nitride

2020/05/21 by Noah Mendelson, Mendelson, Noah, Luis A. Morales +17 · 1 citation
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics)

paper · pdf · doi:10.48550/arxiv.2005.10699

openalex publication_date 2020/05/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Point defects in hexagonal boron nitride have emerged as a promising quantum\nlight source due to their bright and photostable room temperature emission. In\nthis work, we study the incorporation of quantum emitters during chemical vapor\ndeposition growth on a nickel substrate. Combining a range of characterization\ntechniques, we demonstrate that the incorporation of quantum emitters is\nlimited to (001) oriented nickel grains. Such emitters display improved\nemission properties in terms of brightness and stability. We further utilize\nthese emitters and integrate them with a compact optical antenna enhancing\nlight collection from the sources. The hybrid device yields average saturation\ncount rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results\nadvance the controlled generation of spatially distributed quantum emitters in\nhBN and demonstrate a key step towards on-chip devices with maximum collection\nefficiency.\n

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