Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces

2012/07/05 by Y. Ando, Ando, Y., S. Yamada +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1207.1154

5 pages, 4 figures

arxiv created 2012/07/05 · arxiv updated 2012/07/06

Abstract

We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/n⁺-Si/n-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.

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