2018/08/31 by Jesse Maassen, Maassen, Jesse, Vahid Askarpour +1 · 1 citation
Engineering · Materials Science · #Advanced Thermoelectric Materials and Devices #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Thermal properties of materials
paper · pdf · doi:10.48550/arxiv.1808.10713
openalex publication_date 2018/08/31 · openalex created_date 2022/08/03 · openalex updated_date 2026/07/28
Understanding phonon transport across heterojunctions is important to achieve\na wide range of thermal transport properties. Using the McKelvey-Shockley flux\nmethod with first-principles modeling, we theoretically investigate the phonon\ntransport properties of a Si-Ge interface with a focus on the role of inelastic\nbulk phonon processes. We observe significant inelastic scattering near the\ninterface that redistributes the heat among the phonons as a result of\nnon-equilibrium effects driven by the junction. These effects are most\npronounced when the length of the junction is comparable to the average phonon\nmean-free-path. What controls these inelastic processes is elucidated.\n