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Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells

2024/12/12 by Németh, Róbert, Bandaru, Vatsal K., Alves, Pedro +7 · 2 citations
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph)

paper · doi:10.48550/arxiv.2412.09574

Abstract

Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore two schemes for avoiding valley-state excitations at these valley-splitting minima, by allowing the electrons to detour around them. A multichannel shuttling scheme allows electrons to tunnel between parallel channels, while a two-dimensional (2D) shuttler provides full omnidirectional control. Using simulations, we estimate shuttling fidelities in these two schemes, obtaining a clear preference for the 2D shuttler. Based on such encouraging results, we propose a modular qubit architecture based on 2D shuttling, which enables all-to-all connectivity within qubit plaquettes and high-fidelity communication between different plaquettes.

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