Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

2013/03/18 by Hee‐Sung Kang, Hee-Sung Kang, M Siva Pratap Reddy +10 · 6 citations
Engineering · Physics and Astronomy · #Semiconductor materials and devices #GaN-based semiconductor devices and materials #Ferroelectric and Negative Capacitance Devices

paper · doi:10.1088/0022-3727/46/15/155101

Abstract

The electrical characteristics of the Al2O3/GaN metal–insulator–semiconductor capacitors are investigated focusing on the effect of post-deposition annealing (PDA) in O2 ambient. X-ray photoelectron spectroscopy analyses reveal that gallium oxynitride (GaOx Ny) interfacial layer is formed at Al2O3/GaN interface even in non-annealed sample due to incorporation of the released oxygen from Al2O3. After PDA in O2 ambient, the GaOx Ny interfacial layer becomes oxygen-rich which plays a role in increasing negative effective oxide charge at the Al2O3/GaN interface and hence positively shifting the flat band voltage (VFB) for the capacitors.

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