Flexible AlGaN/GaN HEMT devices exfoliated from Si substrate by electrochemical etching

2026/07/27 by Chenxi Xu, Lei Ye, Haodong Wang +4

paper · doi:10.1088/1361-6463/ae90bb

Abstract

Abstract Flexible electronic/optoelectronic devices based on wide-bandgap materials are gaining great attention due to the demand of versatile commercial and military applications. This paper presents an electrochemical etching technique for high-quality transfer of AlGaN/GaN high-electron-mobility transistor (HEMT) thin films from silicon substrate to temporary substrates. Unlike conventional mechanical grinding, this method avoids mechanical damage to the device, thereby preserving the structural integrity and electrical properties of the heterostructure. The surface morphology of the exfoliated HEMT thin films was confirmed by atomic force microscopy (AFM) images with a root mean square (RMS) roughness of 1.9 nm. This transfer technique offers a wafer-scale and low-damage route for fabricating high-performance flexible III-nitride semiconductor devices for wearable, radio-frequency, and power applications.

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