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Defect bound states in the continuum of bilayer electronic materials without symmetry protection

2023/12/28 by Daniel Massatt, Stephen P. Shipman, Massatt, Daniel +5
Materials Science · Physics and Astronomy · #81Q10 #FOS: Mathematics #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Spectral Theory (math.SP) #Surface and Thin Film Phenomena

paper · pdf · doi:10.48550/arxiv.2312.16844

openalex publication_date 2023/12/28 · openalex created_date 2023/12/30 · openalex updated_date 2026/07/28

Abstract

We analyze a class of bound defect states in the continuum electronic spectrum of bilayer materials, which emerge independent of symmetry protection or additional degrees of freedom. Taking graphene as a prototypical example, our comparative analysis of AA- and AB-stacked bilayer graphene demonstrates that these states originate from the intrinsic algebraic structure of the tight-binding Hamiltonian when trigonal warping is neglected rather than any underlying symmetry. Inclusion of trigonal warping and higher-order hoppings broaden the bound states into long-lived resonances. This discovery provides a pathway to previously unexplored approaches in defect and band-structure engineering. We conclude with a proposed protocol for observing these states in scanning tunneling microscopy experiments.

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