2016/09/28 by V. N. Men’shov, V. V. Tugushev, В. В. Тугушев +2 · 17 citations
Chemistry · Materials Science · Physics and Astronomy · #Chemistry #Condensed matter physics #Electron #Graphene research and applications #Heterojunction #Insulator (electricity) #Magnetic field #Materials science #Optoelectronics #Phase (matter) #Phase diagram #Physics #Polarization (electrochemistry) #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Topological Materials and Phenomena #Topological insulator
paper · doi:10.1134/s0021364016190012
published in Journal of Experimental and Theoretical Physics Letters 104(7), 453-459 (Pleiades Publishing)
openalex publication_date 2016/09/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31
We theoretically study how magnetic modulation can be used to manipulate the transport properties of heterostructures formed by a thin film of a three-dimensional topological insulator sandwiched between slabs of a normal insulator. Employing the k ∙ p scheme, in the framework of a continual approach, we argue that electron states of the system are spin-polarized when ultrathin magnetic insertions are incorporated into the film. We demonstrate that (i) the spin-polarization magnitude depends strongly on the magnetic insertion position in the film and (ii) there is the optimal insertion position to realize quantum anomalous Hall effect, which is a function of the material parameters, the film thickness and the topological insulator/normal insulator interface potential. For the heterostructure with a pair of symmetrically placed magnetic insertions, we calculate a phase diagram that shows a series of transitions between distinct quantum regimes of transverse conductivity. We provide consistent interpretation of recent experimental findings in the context of our results.