2025/06/02 by Anonymous, Vivek Kumar, Nirmal Ganguli +2
#cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/jtym-lpxt
Antiferromagnetic spintronics, a promising technology for ultra-fast electronic devices, faces several challenges, including the lack of materials simultaneously hosting robust antiferromagnetism and adequate Rashba-like interaction. We design a heterostructure of BaMnO3|KTaO3 with the idea of proximity-inducing strong Rashba spin-orbit interaction from KTaO3 part to BaMnO3 part, where the latter is already a robust antiferromagnet. Within our DFT calculations, the heterostructure reveals BaMnO3 bands near the Fermi level with a significant magnetic moment per Mn atom and a decent ordering temperature. Further, the BaMnO3 bands in the heterostructure exhibit linear Rashba interaction with a sizable Rashba coefficient, owing to its proximity to KTaO3. Our work can motivate future research by demonstrating the road map to proximity-induced Rashba interaction for antiferromagnetic spintronics.