2023/10/30 by Murat Can Sarihan, Jiahui Huang, Sarihan, Murat Can +13 · 1 citation
Physics and Astronomy · Materials Science · Engineering · #Quantum and electron transport phenomena #Diamond and Carbon-based Materials Research #Photonic and Optical Devices
paper · pdf · doi:10.48550/arxiv.2310.19510
Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and ^*Cu (transition metal) color centers. During T center formation, we observed the formation and dissolution of various defects, including the copper-silver-related defect with a doublet line around 1312 nm (^*Cu0n), near the optical fiber zero dispersion wavelength. We then investigate the photophysics of both T and ^*Cu centers, focusing on their emission spectra and spin properties to assess their potential for high-fidelity spin-photon interfaces. Additionally, we report a 25% broadening of the ^*Cu00 line under a 0.5 T magnetic field, potentially linked to spin degeneracy, suggesting that this defect may provide a promising alternative to T centers for spin-photon interfaces.