2025/02/26 by Jingxin Chen, Xiang Huang, Chen, Jingxin +26
Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Heusler alloys: electronic and magnetic properties #Machine Learning in Materials Science #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.2502.18946
openalex publication_date 2025/02/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
Electrical transport in oxide thin films under high pressure remains largely unexplored due to the lack of a universal experimental strategy. Here we develop an approach that enables high-pressure transport measurements in freestanding oxide films by enhancing their mechanical robustness and integrating them with nanoscale high-pressure devices. As a demonstration, we investigate the resistivity of perovskite SrIrO3 films under hydrostatic pressure and uncover a pressure-driven semimetal-insulator transition near 2.5 GPa, followed by an insulator-metal transition around 9 GPa. In the monolayer limit, SrIrO3 remains insulating and robust against pressure up to 5.5 GPa. The contrasting pressure-dependent phase diagrams of three- and two-dimensional iridates reveal a strong interplay between dimensionality and hydrostatic pressure in correlated oxides. Our work establishes a general platform for exploring pressure-driven phenomena in low-dimensional quantum materials.