Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

2021/10/25 by Mengzhao Li, Li, Mengzhao, Y. Fan +47 · 2 citations
Engineering · Physics and Astronomy · #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies #Superconducting Materials and Applications

paper · pdf · doi:10.48550/arxiv.2110.12632

openalex publication_date 2021/10/25 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28

Abstract

Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10¹5 n_eq/cm² to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.

Cited by

• Beam-test evaluation of pre-production Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector
• Temperature Dependence of Gain and Time Resolution in LGAD Detectors

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