Electron affinity of Bi using infrared laser photodetachment threshold spectroscopy

2001/07/17 by R. C. Bilodeau, H. K. Haugen · 2 citations
Physics and Astronomy · Chemistry · #Advanced Chemical Physics Studies #Spectroscopy and Laser Applications #Cold Atom Physics and Bose-Einstein Condensates #Physics #Hyperfine structure #Atomic physics #Infrared #Electron affinity (data page) #Ion #Electron #Bismuth #Spectroscopy #Laser #Resolution (logic) #Far-infrared laser #Optics #Molecule #Nuclear physics #Materials science #Quantum mechanics

paper · doi:10.1103/physreva.64.024501

openalex publication_date 2001/07/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We report the results of high-resolution infrared laser photodetachment threshold experiments on the negative ion of bismuth. The hyperfine structure of the neutral and negative-ion ground states are included in the threshold model. The electron affinity of ²⁰⁹Bi is determined to be 7600.66(10) cm^\ensuremath-1 [942.362(13) meV].

Citations

• Single- and Multiphoton Infrared Laser Spectroscopy ofSb−: A Case Study
• Binding Energies in Atomic Negative Ions: III

Cited by

• Electron affinity of thallium measured with threshold spectroscopy
• Electron affinity (data page) [wikipedia]