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Chemical composition control at the substrate interface as the key for FeSe thin film growth

2020/12/15 by Yukiko Obata, Michiko Sato, Yuji Kondo +8
Chemistry · Materials Science · Physics and Astronomy · #Chemical engineering #Chemistry #Composite material #Condensed matter physics #Contact angle #Epitaxy #Homogenization (climate) #Interface (matter) #Iron-based superconductors research #Layer (electronics) #Magnetic properties of thin films #Materials science #Nanotechnology #Optoelectronics #Physical chemistry #Physics #Physics of Superconductivity and Magnetism #Pulsed laser deposition #Stoichiometry #Substrate (aquarium) #Superconductivity #Thin film #cond-mat.supr-con

paper · pdf · doi:10.1021/acsami.1c14451

published as ACS Applied Materials & Interfaces 2021 13 (44), 53162-53170 · Submitted

arxiv created 2020/12/15 · openalex publication_date 2021/10/26 · arxiv updated 2022/03/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition which determine FeSe thin film growth and focuses on the film/substrate interface, the tendency for domain matching epitaxial growth but also the disadvantage of chemical heterogeneity. We propose that homogenization of the substrate surface improves the control of stoichiometry, texture, and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. The controlled interface in FeSe/Fe/MgO demonstrates the proof-of-principle.

Citations