2003/02/01 by N. -J. Guo, Nai‐Jie Guo, W. Liu +30
Chemistry · Computer Science · Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advanced Mathematical Modeling in Engineering #Applied mathematics #Boron #Boron nitride #Boundary value problem #Chemistry #Crystallography #Diamond and Carbon-based Materials Research #Differential Equations and Boundary Problems #Differential Equations and Numerical Methods #Differential equation #Dirichlet boundary condition #Dirichlet distribution #Dirichlet problem #Elliptic partial differential equation #Engineering #Engineering physics #Graphene research and applications #Heat equation #Hexagonal boron nitride #Hexagonal crystal system #Ion #Ion implantation #Materials science #Mathematical analysis #Mathematics #Nanotechnology #Nitride #Parabolic partial differential equation #Partial differential equation #Property (philosophy) #Semiconductor materials and devices #Spin (aerodynamics) #quant-ph
paper · pdf · doi:10.1021/acsomega.1c04564
published as ACS Omega 2022
openalex publication_date 2003/02/01 · arxiv created 2022/01/14 · arxiv updated 2022/01/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (V<sub>B</sub> <sup>-</sup>) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of V<sub>B</sub> <sup>-</sup> defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of V<sub>B</sub> <sup>-</sup> defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create V<sub>B</sub> <sup>-</sup> defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.