2021/05/31 by Wenhao Zhang, Zongxiu Wu, Kunliang Bu +9 · 21 citations
Engineering · Materials Science · Mathematics · Physics and Astronomy · #2D Materials and Applications #Algorithm #Chalcogenide Semiconductor Thin Films #Computer science #Geometry #Iron-based superconductors research #Materials science #Mathematics #Metal #Metallurgy #State (computer science) #Surface (topology) #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.105.035110
published in Physical review. B./Physical review. B 105(3) (American Physical Society) · 8 pages, 7 figures
openalex publication_date 2022/01/06 · arxiv created 2022/01/10 · arxiv updated 2022/01/11 · openalex created_date 2022/01/25 · openalex updated_date 2026/08/06
The origin of different electronic states of 1T\ensuremath-TaS2 and 1T\ensuremath-TaSe2 remains controversial due to the complicated correlated electronic properties. We apply scanning tunneling microscopy to study the electronic state of bulk 1T\ensuremath-TaSe2. Both insulating and metallic states are identified in different areas of the same sample. The insulating state is similar to that in 1T\ensuremath-TaS2, concerning both the dI/dV spectrum and the orbital texture. With detailed investigations in single-step areas, the electronic state measured on the upper-layer surface is found to be associated with different stacking orders and the lower layer's electronic state. The insulating state is most possibly a single-layer property, perturbed to a metallic state by particular stacking orders. Both the metallic and large-gap insulating spectra, together with their corresponding stacking orders, are stable states in 1T\text\ensuremath-TaSe2. The connected metallic areas lead to the metallic transport behavior. We then reconcile the bulk metallic and surface insulating state in 1T\ensuremath-TaSe2. The rich phenomena in 1T\ensuremath-TaSe2 deepen our understanding of the correlated electronic state in bulk 1T\ensuremath-TaSe2 and 1T\ensuremath-TaS2.