2021/11/18 by Chandan Kumar, Anindya Das · 1 citation
Materials Science · Physics and Astronomy · #2D Materials and Applications #Boron nitride #Charge carrier #Condensed matter physics #Crystal (programming language) #Crystallographic defect #Doping #Electron #Fermi level #Ga2O3 and related materials #Graphene #Graphene research and applications #Materials science #Nanotechnology #Noise (video) #Optoelectronics #Physics #Substrate (aquarium) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/5.0071152
Accepted in Applied Physics Letters
arxiv created 2021/11/18 · openalex publication_date 2021/11/29 · openalex created_date 2021/12/06 · arxiv updated 2021/12/15 · openalex updated_date 2026/07/28
Low frequency 1/f noise is investigated in graphene, encapsulated between the hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on the Si/SiO2 substrate. The noise amplitude in the hole doped region is independent of carrier density, while in the electron doped region, a pronounced peak is observed at Fermi energy, EF∼90 meV. The physical mechanism of the anomalous noise peak in the electron doped region is attributed to the impurity states originating from the Carbon atom replacing the nitrogen site in the hBN crystal. Furthermore, the noise study near the Dirac point shows a characteristic “M-shape,” which is found to be strongly correlated with the charge inhomogeneity region near the Dirac point.