2021/05/27 by Sven Esser, Jiongyao Wu, Sebastian Esser +8 · 9 citations
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Anisotropy #Berry connection and curvature #Condensed matter physics #Electronic and Structural Properties of Oxides #Ferromagnetism #Geometric phase #Hall effect #Magnetic and transport properties of perovskites and related materials #Magnetic field #Magnetoresistance #Materials science #Physics #Quantum mechanics #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.103.214430
published in Physical review. B./Physical review. B 103(21) (American Physical Society) · to be published in Phys. Rev. B
arxiv created 2021/05/27 · openalex created_date 2021/06/07 · openalex publication_date 2021/06/21 · arxiv updated 2021/10/18 · openalex updated_date 2026/08/05
The perovskite SrRuO3 is a prototypical itinerant ferromagnet which allows interface engineering of its electronic and magnetic properties. We report the synthesis and investigation of atomically flat artificial multilayers of SrRuO3 with the spin-orbit semimetal SrIrO3 in combination with band-structure calculations with a Hubbard U term and topological analysis. The latter reveal an electronic reconstruction and emergence of flat Ru-4dxz bands near the interface, ferromagnetic interlayer coupling, and a negative Berry-curvature contribution to the anomalous Hall effect. We analyze the Hall effect and magnetoresistance measurements as a function of the field angle from an out-of-plane towards an in-plane orientation (either parallel or perpendicular to the current direction) by a two-channel model. The magnetic easy direction is tilted by about 20^\ensuremath∘ from the sample normal for low magnetic fields, rotating towards the out-of-plane direction by increasing fields. Fully strained epitaxial growth enables a strong anisotropy of magnetoresistance. An additional Hall effect contribution, not accounted for by the two-channel model, is compatible with stable skyrmions only up to a critical angle of roughly 45^\ensuremath∘ from the sample normal. Within about 20^\ensuremath∘ from the thin film plane an additional peaklike contribution to the Hall effect suggests the formation of a nontrivial spin structure.