2020/12/31 by Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevapplied.16.034031
published as Phys. Rev. Applied 16, 034031 (2021)
arxiv created 2021/01/28 · arxiv updated 2021/09/23
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.