2021/09/04 by Alvin Tang, Aravindh Kumar, Marc Jaikissoon +3 · 1 citation
Physics and Astronomy · #physics.app-ph #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/acsami.1c06812
published as ACS Appl. Mater. Interfaces 13, 41866 (2021)
arxiv created 2021/09/04 · arxiv updated 2021/09/20
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 C in 50 min, within the 450-to-600 C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ~140 μA/μm at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS2 grown below 600 C using solid-source precursors. The effective mobility from transfer length method test structures is \mathrm29 ± 5 cm2V-1s-1 at \mathrm6.1 × 1012 cm-2 electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing.