2023/12/15 by Bal, M. E., Cheah, E., Lei, Z. +5 · 1 citation
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · doi:10.48550/arxiv.2312.09704
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of m∗ ≈ 0.022me, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective g-factor was determined to be g∗ ≈ 21.9. These results are also corroborated by k ⋅ p band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the g-factor is significantly enhanced by electron-electron interactions, reaching a value as large as g∗ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.