2020/11/19 by Guang Yang, Yi Zhang
Materials Science · Physics and Astronomy · #Approx #Band gap #Charge-carrier density #Condensed matter physics #Doping #Electron #Fermi level #Fermi surface #Graphene research and applications #Landau quantization #Limit (mathematics) #Magnetic field #Physics #Quantum #Quantum Hall effect #Quantum and electron transport phenomena #Quantum limit #Quantum mechanics #Quantum oscillations #Quantum spin Hall effect #Semimetal #Topological Materials and Phenomena #Type (biology) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.103.l241104
published as Phys. Rev. B 103, 241104 (2021) · 6 pages,5 figures
arxiv created 2020/11/19 · openalex publication_date 2021/06/09 · arxiv updated 2021/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The quantum-limit Hall effect at \ensuremathν=nh/eB\ensuremath∼O(1) that hosts a variety of exotic quantum phenomena requires demanding strong magnetic field B and low carrier density n. We propose to realize the quantum-limit Hall effect even in the presence of large carrier density residues ne and nh in a relatively weak and variable magnetic field B in topological semimetals, where a single Fermi-surface contour allows both electron-type and hole-type carriers and approaches charge neutrality when ne\ensuremath≈nh. The underlying filling factor \ensuremathν=|ne\ensuremath-nh|h/eB also offers an example that violates Onsager's relation for quantum oscillations.