2020/06/11 by Felix Carrascoso, Hao Li, Riccardo Frisenda +1 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci #cond-mat.mes-hall #physics.app-ph
paper · pdf · doi:10.1007/s12274-020-2918-2
published as Nano Research, volume 14, pages 1698-1703 (2021) · 4 main text figures, 5 tables, 18 figures in the supporting information
arxiv created 2020/06/11 · arxiv updated 2021/05/11
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.