2021/03/25 by Davit A. Ghazaryan, Abhishek Misra, Evgenii E. Vdovin +5
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Bilayer #Bilayer graphene #Electron #Graphene #Graphene nanoribbons #Graphene research and applications #Monolayer #Quantum and electron transport phenomena #Quantum tunnelling #Transistor #cond-mat.mes-hall
paper · pdf · doi:10.1063/5.0048191
published as Appl. Phys. Lett. 118, 183106 (2021)
arxiv created 2021/03/25 · openalex created_date 2021/03/29 · openalex publication_date 2021/05/03 · arxiv updated 2021/05/07 · openalex updated_date 2026/08/05
We prepare twist-controlled resonant tunneling transistors consisting of monolayer and Bernal bilayer graphene electrodes separated by a thin layer of hexagonal boron nitride. The resonant conditions are achieved by closely aligning the crystallographic orientation of graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.