2023/06/28 by Joseph B. Costello, Seamus O’Hara, Costello, Joseph B. +11 · 1 citation
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #Terahertz technology and applications
paper · pdf · doi:10.48550/arxiv.2306.16586
openalex publication_date 2023/06/28 · openalex created_date 2023/07/01 · openalex updated_date 2026/07/28
Recently, high-order sideband polarimetry has been established as an experimental method that links the polarization of sidebands to an interference of Bloch wavefunctions. However, the robustness of sideband polarizations to increasing dephasing remains to be explored. Here, we investigate the dependence of high-order sideband generation in bulk gallium arsenide on dephasing by tuning temperature. We find that the intensities of the sidebands, but not their polarizations, depend strongly on temperature. Using our polarimetry method, we are able to isolate the contributions of electron-heavy hole (HH) and electron-light hole (LH) pairs to sideband intensities, and separately extract the nonequilibrium dephasing coefficients associated with the longitudinal optical (LO) phonons and acoustic (A) phonons for each species of electron-hole pair. We find that ΓHH,A = 6.1 ± 1.6 μeV/K, ΓLH,A < 1.5 μeV/K, ΓHH,LO = 14 ± 3 meV, and ΓLH,LO = 30 ± 3 meV.