2020/07/31 by Fatemeh Barati, Josh P. Thompson, Matthieu Dartiailh +11 · 1 citation
Physics and Astronomy · #Condensed matter physics #Dielectric #Electrical engineering #Epitaxy #Fabrication #Field-effect transistor #Gate dielectric #Heterojunction #Josephson effect #Layer (electronics) #Materials science #Mesoscopic physics #Nanotechnology #Optoelectronics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Superconductivity #Supercurrent #Topological Materials and Phenomena #Transistor #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1021/acs.nanolett.0c03183
published as Nano Lett. 21, 1915 (2021)
arxiv created 2021/01/28 · openalex publication_date 2021/02/22 · arxiv updated 2021/03/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
High Resolution Image Download MS PowerPoint Slide Epitaxial Al-InAs heterostructures appear as a promising materials platform for exploring mesoscopic and topological superconductivity. A unique property of Josephson junction field effect transistors (JJ-FETs) fabricated on these heterostructures is the ability to tune the supercurrent using a metallic gate. Here, we report the fabrication and measurement of gate-tunable Al-InAs JJ-FETs in which the gate dielectric in contact with the InAs is produced by mechanically exfoliated hexagonal boron nitride (h-BN) followed by dry transfer. We discuss a versatile fabrication process that enables compatibility between layered material transfer and Al-InAs heterostructures that allows us to achieve full gate-tunability of supercurrent by using only 5 nm thick h-BN flakes. Our study shows that pristine properties of epitaxial Josephson junctions, such as product of normal resistance and critical current, I c R n, are preserved. Furthermore, complementary measurements confirm that using h-BN dielectric changes the channel density less when compared to atomic layer deposition of Al 2 O 3 .