2018/03/31 by L. A. Terrazos, E. Marcellina, Elizabeth Marcellina +10 · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Electron #Physics #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Qubit #Semiconductor materials and devices #Spin (aerodynamics) #Spin engineering #Spin polarization #Spins #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.103.125201
published as Phys. Rev. B 103, 125201 (2021) · 1 pages
arxiv created 2021/01/30 · openalex publication_date 2021/03/15 · arxiv updated 2021/03/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We theoretically investigate the properties of holes in a SixGe_1\ensuremath-x/Ge/SixGe_1\ensuremath-x quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large (>100 meV) intrinsic splitting between the light and heavy hole bands, a very light (\ensuremath∼0.05\phantom\rule4pt0exm0) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits.