Interfacial Crystal Hall Effect Reversible by Ferroelectric Polarization

2020/06/30 by Ding-Fu Shao, Jun Ding, Gautam Gurung +2
Materials Science · Physics and Astronomy · #2D Materials and Applications #Antiferromagnetism #Crystal (programming language) #Ferroelectricity #Heterojunction #Magnetization #Multiferroics and related materials #Polarization (electrochemistry) #Quantum Hall effect #Spintronics #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci #van der Waals force

paper · pdf · doi:10.1103/physrevapplied.15.024057

published as Phys. Rev. Applied 15, 024057 (2021)

openalex created_date 2020/06/25 · arxiv created 2021/02/20 · openalex publication_date 2021/02/23 · arxiv updated 2021/03/01 · openalex updated_date 2026/08/05

Abstract

The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and nonmagnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density-functional-theory calculations for three material systems: MnBi₂Te₄/GeI₂ and topological In₂Te₃/MnBi₂Te₄/In₂Te₃ van der Waals heterostructures and a GeTe/Ru₂MnGe/GeTe heterostructure composed of three-dimensional materials. We show that all three systems reveal a sizable ICHE, while the last two exhibit a quantum ICHE and ICHE, respectively, that are reversible with ferroelectric polarization. Our proposal provides an alternative direction for voltage-controlled spintronics and offers as-yet unexplored possibilities for functional devices by heterostructure design.

Citations

• Projector augmented-wave method
• From ultrasoft pseudopotentials to the projector augmented-wave method
• Hall Effect in Ferromagnetics
• Generalized Gradient Approximation Made Simple
• Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
• Anomalous Hall effect
• LevelScheme: A level scheme drawing and scientific figure preparation system for Mathematica
• Prediction of electrically induced magnetic reconstruction at the manganite/ferroelectric interface
• Maximally localized Wannier functions: Theory and applications
• A consistent and accurateab initioparametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
• Berry phase effects on electronic properties
• Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi₂Te₄
• Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
• Crystal time-reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets