2020/08/26 by F. van Riggelen, N. W. Hendrickx, W. I. L. Lawrie +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Electro-absorption modulator #Germanium #Planar #Quantum #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Quantum point contact #Quantum sensor #Quantum wire #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/5.0037330
7 pages, 4 figures
arxiv created 2020/08/26 · openalex created_date 2020/09/01 · openalex publication_date 2021/01/25 · arxiv updated 2021/02/24 · openalex updated_date 2026/08/05
Quantum dots fabricated using methods compatible with semiconductor manufacturing are promising for quantum information processing. In order to fully utilize the potential of this platform, scaling quantum dot arrays along two dimensions is a key step. Here, we demonstrate a two-dimensional quantum dot array where each quantum dot is tuned to single-charge occupancy, verified by simultaneous measurements using two integrated radio frequency charge sensors. We achieve this by using planar germanium quantum dots with low disorder and a small effective mass, allowing the incorporation of dedicated barrier gates to control the coupling of the quantum dots. We measure the hole charge filling spectrum and show that we can tune single-hole quantum dots from isolated quantum dots to strongly exchange coupled quantum dots. These results motivate the use of planar germanium quantum dots as building blocks for quantum simulation and computation.