2021/02/07 by R. Li, N. I. Dumoulin Stuyck, S. Kubicek +12 · 2 citations
Physics and Astronomy · #cond-mat.mes-hall #physics.app-ph #quant-ph
published as 2020 IEEE International Electron Devices Meeting (IEDM 2020), 38.3.1-38.3.4 · 2020 IEEE International Electron Devices Meeting (IEDM), December 12-18, 2020
arxiv created 2021/02/07 · arxiv updated 2021/02/09
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.