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Infrared dielectric properties of low-stress silicon oxide

2016/03/15 by Giuseppe Cataldo, Edward J. Wollack, Ari D. Brown +1 · 1 citation
Physics and Astronomy · #physics.optics #astro-ph.IM #cond-mat.mtrl-sci

paper · pdf · doi:10.1364/ol.41.001364

published as Opt. Lett. 41, 1364-1367 (2016) · 4 pages, 3 figures, 1 table

arxiv created 2016/03/15 · arxiv updated 2021/01/29

Abstract

Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.

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