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Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

2020/11/12 by Seiya Suzuki, Takuya Iwasaki, K. Kanishka H. De Silva +7
Materials Science · Physics and Astronomy · #2D Materials and Applications #Annealing (glass) #Boron nitride #Fabrication #Germanene #Germanium #Graphene research and applications #Raman spectroscopy #Thermal properties of materials #cond-mat.mtrl-sci #van der Waals force

paper · pdf · doi:10.1002/adfm.202007038

published as Adv. Funct. Mater. 10.1002/adfm.202007038 (2020) · 34 Pages, 11 Figures

openalex publication_date 2020/11/12 · arxiv created 2020/11/17 · arxiv updated 2020/11/18 · openalex created_date 2020/11/23 · openalex updated_date 2026/08/05

Abstract

Abstract Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h‐BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N 2 or H 2 /Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh‐vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al 2 O 3 cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first‐principles density functional theory calculations. The direct growth of h‐BN‐capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene‐based electronic devices.

Citations