2019/09/24 by Andreas Lubatsch, Regine Frank
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #Dynamical mean field theory #Field (mathematics) #Floquet theory #Hubbard model #Quantum #Quantum many-body systems #Semiconductor #Topological Materials and Phenomena #Topological insulator #Topology (electrical circuits) #cond-mat.mes-hall #cond-mat.str-el #physics.comp-ph #quant-ph
paper · pdf · doi:10.3390/sym11101246
published as Symmetry 11 (10), 1246 (2019) · Symmetry (accepted September 18, 2019). arXiv admin note: substantial text overlap with arXiv:1909.06922
arxiv created 2019/09/24 · openalex created_date 2019/09/26 · openalex publication_date 2019/10/04 · arxiv updated 2020/08/04 · openalex updated_date 2026/08/05
Spatially uniform optical excitations can induce Floquet topological band structures within insulators which can develop similar or equal characteristics as are known from three-dimensional topological insulators. We derive in this article theoretically the development of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter and we present results for the lifetime of these states and their occupation in the non-equilibrium. The direct physical impact of the mathematical precision of the Floquet-Keldysh theory is evident when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium for a case of ZnO. The physical consequences of the topological non-equilibrium effects in our results for correlated systems are explained with their impact on optoelectronic applications.