2019/10/31 by Elliot J. Connors, JJ Nelson, John M. Nichol · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevapplied.13.024019
published as Phys. Rev. Applied 13, 024019 (2020)
arxiv created 2020/07/08 · arxiv updated 2020/07/10
Silicon spin qubits show great promise as a scalable qubit platform for fault-tolerant quantum computing. However, fast high-fidelity readout of charge and spin states, which is required for quantum error correction, has remained elusive. Radio-frequency reflectometry enables rapid high-fidelity readout of GaAs spin qubits, but the relatively large resistances and capacitances of accumulation-mode Si quantum dot devices have made radio-frequency reflectometry challenging in these platforms. In this work, we implement radio-frequency reflectometry in a Si/SiGe quantum dot device with overlapping gates by making minor device-level changes that eliminate these challenges. We demonstrate charge state readout with a fidelity above 99.9% in an integration time of 300 ns. We measure the singlet and triplet states of a double quantum dot via both conventional Pauli spin blockade and a charge latching mechanism, and we achieve maximum fidelities of 82.9% and 99.0% in 2.08 μs and 1.6 μs integration times, respectively. We also use radio-frequency reflectometry to perform single-shot readout of single-spin states via spin-selective tunneling in microsecond-scale integration times.