2020/04/07 by Keisuke Masuda, Hiroyoshi Itoh, Yoshio Miura · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.101.144404
published as Phys. Rev. B 101, 144404 (2020) · 5 pages, 5 figures, 1 table
arxiv created 2020/04/07 · arxiv updated 2020/04/08
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000%, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial d-p antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).