2018/03/31 by Akihiko Sekine, Allan H. MacDonald, A. H. MacDonald
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Berry connection and curvature #Bilayer graphene #Chemistry #Condensed matter physics #Curvature #Electron #Geometric phase #Graphene #Graphene research and applications #Magnetic field #Magnetoresistance #Physics #Polarization (electrochemistry) #Position and momentum space #Quantum mechanics #Scattering #Semiconductor #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.97.201301
published as Phys. Rev. B 97, 201301(R) (2018) · 5 pages, 3 figures + 9 pages, 1 figure
openalex publication_date 2018/05/30 · arxiv created 2018/05/31 · arxiv updated 2020/02/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.