2020/01/21 by N. Ha, Neul Ha, Takaaki Mano +9 · 25 citations
Engineering · Physics and Astronomy · #Autocorrelation #Luminescence #Near-Field Optical Microscopy #Photoluminescence #Photon #Quantum dot #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Single-photon source #Ternary operation #Wavelength #cond-mat.mes-hall
paper · pdf · doi:10.35848/1882-0786/ab6e0f
published in Applied Physics Express 13(2), 025002 (Institute of Physics) · 4 pages
arxiv created 2020/01/21 · openalex publication_date 2020/02/01 · arxiv updated 2020/02/05 · openalex created_date 2020/02/14 · openalex updated_date 2026/08/05
Abstract We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 μ m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.