2023/10/19 by Yuyang Han, Han, Yuyang, Christian Pederson +9
Engineering · Materials Science · #Advanced Surface Polishing Techniques #Diamond and Carbon-based Materials Research #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Quantum Physics (quant-ph)
paper · pdf · doi:10.48550/arxiv.2310.12484
openalex publication_date 2023/10/19 · openalex created_date 2023/10/21 · openalex updated_date 2026/07/28
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as ``recoil implantation.'' Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable optical properties after annealing.